Micron Technology Inc. and Intel Introduce new 3D Memory

(Photo Courtesy of: AnandTech)

Micron Technology Inc. and Intel Corporation announced last Thursday the sampling of their jointly developed 3D NAND technology. According to the press release, 258GB are “sampling with select partners” and the larger 384GB chips will start sampling later in the spring. Representatives of Intel and Micron stated one key point that the companies will deliver the “highest-density flash device ever developed.” The company also mentioned that their 3D NAND uses a “floating Gate” structure that “limits variable” and “increase quality and reliability.” According to AnandTech, Samsung and Toshiba will use “charge traps” instead of floating gate which has significant advantages like greater reliability and lower power consumption. Experts are calling it the single largest business opportunity in the history of capitalism.



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